By Rolf Haug
The 2008 Spring assembly of the Arbeitskreis Festkörperphysik used to be held in Berlin, Germany, among February 24 and February 29, 2008 at the side of the 72nd Annual assembly of the Deutsche Physikalische Gesellschaft. The 2008 assembly was once the most important physics assembly in Europe and one of the greatest physics conferences on the planet in 2008.
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T. Mayers, T. Herricks, and Y. Xia: Chem. Mater. 14, 4736 (2002) 32. K. K. Caswell, C. M. Bender, and C. J. Murphy: Nano Lett. 3, 667 (2003) 33. J. Jhu, S. Liu, O. Palchik, Y. Koltypin, and A. Gedanken: Langumir 16, 6396 (2000) 34. Y. Sun, Y. Yin, B. Gates, B. T. Mayers and Y. Xia: Nano Lett. 2, 165 (2002) 35. C. S. Ah, S. D. Hong, and D. J. Jang: J. Phys. Chem. B 103, 3073 (1999) ZnO Nanostructures: Optical Resonators and Lasing Klaus Thonke1 , Anton Reiser1 , Martin Schirra1 , Martin Feneberg1 , Günther M.
Fig. 4. Extinction spectra of the foils coated in diﬀerent ways. which means sacriﬁcing conductivity. Otherwise increasing the conductivity by increasing the ﬁlling factor will diminish the transparency . A compromise can be found if the nanoculsters with extremely low ﬁlling factor are organized in a wire like fashion. such arrangement will cause a fundamental change in the electrical as well as in the optical properties. In contrast to the requirements of nanowires on ﬂexible substrates for optical and electronic applications, nanowires for sensor applications require other properties.
5b. The schematic of the device is depicted in Fig. 5c. First ﬁeld eﬀect transistor curves are shown in Fig. 5d. A gate control can be achieved, enabling to drive the transistor at an optimal current for sensing. Please note that the transistor is not optimized at in order to be proof of principle. This is the ﬁrst transistor demonstrated with the facture approach on a microstructured silicon chip. Currently, the setup is tested as an ozone sensor in a collaboration with Volker Cimalla at the Fraunhofer-Institut für Angewandte Festkörperphysik IAF in Freiburg.
Advances in Solid State Physics 48 by Rolf Haug